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王大鹏 ( 副教授 )

王大鹏(副教授)

Ph. D., Kochi University of Technology,Japan. (2008-2012)

工学博士,高知工科大学,日本

Post-doc., School of Environment Science and Technology, Kochi University of Technology,Japan(2012-2015)

博士后,高知工科大学环境理工学群,日本

副教授,陕西师范大学(2015.12-

E-mail: dpwang@snnu.edu.cn

研究方向

金属氧化物薄膜晶体管设计、制备、测试

氧化物纳米结构的制备与应用

半导体材料薄膜形成技术与应用

代表性成果

近年承担项目

1.      主持陕西师范大学引进人才科研启动基本资金项目,50万,201512-201812月。

 

近年发表论文

1.      Dapeng Wang, Jingxin Jiang, Mamoru Furuta, Investigation of Carrier Generation Mechanism in Fluorine-doped n+-In-Ga-Zn-O for Self-Aligned Thin-Film Transistors. J. Display Technol., (2015). DOI: 10.1109/JDT.2015.2472981

2.      Mai Phi Hung, Dapeng Wang, Mamoru Furuta, Origin of the alternative current (AC-) gate bias improving the NBIS stability of IGZO TFTs. ECS Solid State Lett., 4(12) (2015) Q66-Q68.

3.      Y. Koga, T. Matsuda, M. Kimura, WANG Dapeng, FURUTA Mamoru, M. Kasami, S. Tomai, K. Yano, Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-Film Transistors. IEICE Trans. on Electronics., E98-C(11) (2015) 1028-1031.

4.      Mai Phi Hung, Dapeng Wang, Mamoru Furuta, Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In-Ga-Zn-O TFT by Conductance Method. IEEE Trans. Electron Devices, 62(11) (2015) 3697-3702.

5.      Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang, Doping and Defect Passivation in In-Ga-Zn-O by Fluorine. ECS Transaction, 67(1) (2015) 41-49.

6.      Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Mamoru Furuta, Suppression of Degradation Induced by Negative Gate bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias. ACS Appl. Mat. Inter., 6(8) (2014) 5713-5718.

7.      Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Mamoru Furuta, Drain Bias Effect on the Instability of Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Gate Bias and Illumination Stress. ECS Transactions, 64(10) (2014) 65-70. 

8.      Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Chaoyang Li, Mamoru Furuta, Effect of Drain Bias on Negative Gate Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors, Jpn. J. Appl. Phys., 53(3S1) (2014) 03CC01-1-4.

9.      Jingxin Jiang, Toda Tatsuya, Mai Phi Hung, Dapeng Wang, Mamoru Furuta, Highly Stable Fluorinated In-Ga-Zn-O Thin-Film Transistors under Positive Gate Bias and Temperature Stress. Appl. Phys. Express, 7 (2014) 114103-1-4.  

10.  Toda Tatsuya, Dapeng Wang, Jingxin Jiang, Mai Phi Hung, Mamoru Furuta, Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor properties, IEEE Trans. Electron Devices, 61(11) (2014) 3762-3767.  

11.  Mai Phi Hung, Dapeng Wang, Tasuya Toda, Jingxin Jiang, Mamoru Furuta, Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress. ECS J. Solid Sci. Technol., 3(9) (2014) Q3023-Q3026. 

12. Jingxin Jiang, Mamoru Furuta, Dapeng Wang, Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor with Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride. IEEE Electron Devices Lett., 35(9) (2014) 933-935.